Computing in the actual storage banks seems a bit over-the-top to me, but I always wondered about computing in the "currently open row". It seems like an obvious optimization candidate for fast memset() and memcpy(), by setting that row from another source than the storage bank, selectively loading or storing it, and shifting its contents around.
Two recent (weeks) papers/presentations on:
doing just that (LUT at the row buffer) https://youtu.be/9t1FJQ6nNw4;
doing parallel sense in NAND for computing AND between rows (which they call pages, but in DRAM they're called rows. It's the same concept, though.) https://youtu.be/QWL2Rw_VhHg
